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| VISHAY BYW172D / 172F / 172G Vishay Semiconductors Fast Avalanche Sinterglass Diode Features * * * * Glass passivated junction Hermetically sealed package Soft recovery characteristics Low reverse current 949588 * Low forward voltage drop * High pulse current capability Mechanical Data Case: SOD-64 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 858 mg Applications Fast rectification diode in S.M.P.S Parts Table Part BYW172D BYW172F BYW172G Type differentiation VR = 200 V; IFAV = 3 A VR = 300 V; IFAV = 3 A VR = 400 V; IFAV = 3 A SOD-64 SOD-64 SOD-64 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics Part BYW172D BYW172F BYW172G Peak forward surge current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 1 A tp = 10 ms, single half sine wave Symbol VR = VRRM VR = VRRM VR = VRRM IFSM IFAV Tj = Tstg ER Value 200 300 400 100 3 - 55 to + 175 20 Unit V V V A A C mJ Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Symbol RthJA RthJA Value 25 70 Unit K/W K/W Document Number 86096 Rev. 1.2, 12-Aug-04 www.vishay.com 1 BYW172D / 172F / 172G Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Reverse recovery time IF = 3 A IF = 9 A VR = VRRM VR = VRRM, Tj = 100 C IF = 0.5 A, IR = 1 A , iR = 0.25 A Test condition Symbol VF VF IR IR trr 75 Min Typ. Max 1.1 1.5 1 20 100 VISHAY Unit V V A A ns Typical Characteristics (Tamb = 25 C unless otherwise specified) RthJA - Therm. Resist. Junction/Ambient (K/W) 40 I FAV - Average Forward Current ( A ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 RthJA = 70 K/W PCB: d = 25 mm 30 V R = VRRM half sinewave R thJA = 25 K/W l = 10 mm 20 l 10 l 0 0 5 10 15 TL= constant 20 25 30 l - Lead Length ( mm ) 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature ( C ) 94 9466 16388 Figure 1. Max. Thermal Resistance vs. Lead Length Figure 3. Max. Average Forward Current vs. Ambient Temperature 100 I F - Forward Current ( A ) 1000 I R - Reverse Current ( A ) V R = VRRM 10 Tj = 175 C 1 0.1 0.01 Tj = 25 C 100 10 0.001 0 16387 1 0.5 1.0 1.5 2.0 2.5 16389 25 50 75 100 125 150 175 V F - Forward Voltage ( V ) Tj - Junction Temperature ( C ) Figure 2. Forward Current vs. Forward Voltage Figure 4. Reverse Current vs. Junction Temperature www.vishay.com 2 Document Number 86096 Rev. 1.2, 12-Aug-04 VISHAY BYW172D / 172F / 172G Vishay Semiconductors P - Reverse Power Dissipation ( mW ) R 180 160 140 120 100 80 60 40 20 0 25 50 75 100 PR -Limit @80 % V R 120 CD - Diode Capacitance ( pF ) V R = VRRM f =1 MHz 100 80 60 40 20 0 0.1 PR -Limit @100 % V R 125 150 175 16391 1 10 100 16390 Tj - Junction Temperature ( C ) V R - Reverse Voltage ( V ) Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature Z thp - Thermal Resistance f. Pulse Cond. (K/W Figure 6. Diode Capacitance vs. Reverse Voltage 1000 V RRM = 600 V R thJA = 70 K/W 100 tp /T= 0.5 tp /T= 0.2 10 tp/T= 0.1 t p/T= 0.05 0.02 1 10 -4 tp/T= 0.01 10 -3 10 -2 10 -1 10 0 10 1 10 2 t p - Pulse Length ( s ) 10 0 10 1 10 2 I FRM - Repetitive Peak Forward Current ( A ) 70C Tamb = 25C 100 C 45C 94 9562 Figure 7. Thermal Response Package Dimensions in mm (Inches) Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. ISO Method E 1.35 (0.053) max. 26(1.014) min. 4.0 (0.156) max. 26 (1.014) min. 94 9587 Document Number 86096 Rev. 1.2, 12-Aug-04 www.vishay.com 3 BYW172D / 172F / 172G Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 86096 Rev. 1.2, 12-Aug-04 |
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